MS35C31 datasheet(2/4 Pages) BWTECH

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MS35C31

N & P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS35C31]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

N-Channel

P-Channel

Unit

VDS

Drain-Source Voltage

-26.5

VGS

Gate-Source Voltage

±12

Continuous Drain Current

a (T

A=25°C)

3.7

-2.7

Continuous Drain Current

a (T

A=70°C)

2.9

-2.1

IDM

Pulsed Drain Current

-8

Continuous Source Current (Diode Conduction)

1.05

-1.05

Power Dissipation

a (T

A =25°C)

1.15

Power Dissipation

a (T

A =70°C)

0.7

TJ/TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

N-Channel

P-Channel

Units

Typ

Max

Typ

Max

RTHJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

110

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

130

150

130

150

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS , ID = 250μA

VDS = VGS , ID = -250μA

0.6

-0.6

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = 12 V

VDS = 0 V , VGS = -12 V

100

-100

IDSS

Zero Gate Voltage

Drain Current

VDS = 21 V , VGS = 0 V

VDS = -21 V , VGS = 0 V

VDS = 21 V , VGS = 0 V , TJ= 55°C

VDS = -21 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = 5 V , VGS = 4.5 V

VDS = -5 V , VGS = -4.5 V

-5

DS(on)

Drain-Source

On-Resistance

VGS = 4.5 V , ID = 3.7 A

VGS = -4.5 V , ID = 3.1 A

VGS = 2.5 V , ID = 2.7 A

VGS = -2.5 V , ID = -2.2 A

0.058

0.112

0.08

0.17

gfs

Forward Tranconductance

VDS = 5 V , ID = 3.7 A

VDS = -5 V , ID = 3.1 A

VSD

Diode Forward Voltage

IS = 1.05 A , VGS = 0 V

IS = -1.05 A , VGS = 0 V

0.80

-0.83

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