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MS35C31 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MS35C31 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 4 page ![]() MS35C31 N & P-Channel 30-V (D-S) MOSFET Publication Order Number: [MS35C31] © Bruckewell Technology Corporation Rev. A -2014 Dynamic b Symbol Parameter Test Conditions Ch Min Typ. Max. Units Qg Total Gate Charge N-Channel VDS = 15 V , ID= 2.7 A , VGS = 4.5 V P-Channel VDS = -15 V , ID= -3.1 A , VGS = -4.5 V N P 6.3 3.8 nC Qgs Gate-Source Charge N P 0.9 0.6 nC Qgd Gate-Drain Charge N P 1.9 1.5 nC td(on) Turn-On Delay Time N-Channel VDD = 15 V , VGS = 4.5 V , RGEN = 15 Ω , ID = 1 A P-Channel VDD = -15 V , VGS = -4.5 V , RGEN = 15 Ω , ID = -1 A N P 5 5 ns tr Rise Time N P 12 15 ns td(off) Turn-Off Delay Time N P 13 20 ns tf Fall Time N P 7 20 ns Notes: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. |
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