MS39P93 datasheet(2/6 Pages) BWTECH

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MS39P93

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS39P93]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A=25°C)

-2.5

Continuous Drain Current

a (T

A=70°C)

-1.9

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

±1.6

Power Dissipation

a (T

A =25°C)

1.15

Power Dissipation

a (T

A =70°C)

0.7

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

Typ

Max

Units

RTHJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

110

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

130

150

Notes:

a. Surface Mo

unted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

-1

IGSS

Gate-Body Leakage

VDS =0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -24 V , VGS = 0 V

VDS = -24 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -10 V

-3

IDS(on)

Drain-Source On-Resistance

VGS = -10 V , ID = -2.5 A

VGS = -4.5 V , ID = -1.9 A

0.13

0.19

gfs

Forward Tranconductance

VDS = -5 V , ID = -2.5 A

VSD

Diode Forward Voltage

IS = -1.6 A , VGS = 0 V

-0.70

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = -5 V , ID = -2.5 A ,

VGS = -4.5 V

6.0

Qgs

Gate-Source Charge

0.8

Qgd

Gate-Drain Charge

1.3

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