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AUIRFP2907Z Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRFP2907Z Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 12 page  AUIRFP2907Z 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V. Part not recommended for use above this value. ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V. Rθ is measured at TJ of approximately 90°C. S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage75 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 180 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 180 270 Qgs Gate-to-Source Charge ––– 46 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 65 ––– td(on) Turn-On Delay Time –––19––– ns tr Rise Time ––– 140 ––– td(off) Turn-Off Delay Time –––97––– tf Fall Time ––– 100 ––– LD Internal Drain Inductance ––– 5.0 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 13 ––– from package and center of die contact Ciss Input Capacitance ––– 7500 ––– pF Coss Output Capacitance ––– 970 ––– Crss Reverse Transfer Capacitance ––– 510 ––– Coss Output Capacitance ––– 3640 ––– Coss Output Capacitance ––– 650 ––– Coss eff. Effective Output Capacitance ––– 1020 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 90 (Body Diode) A ISM Pulsed Source Current ––– ––– 680 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 41 61 ns Qrr Reverse Recovery Charge ––– 59 89 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = VGS, ID = 250µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C Conditions Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 90A f TJ = 25°C, IF = 90A, VDD = 38V di/dt = 100A/µs f TJ = 25°C, IS = 90A, VGS = 0V f showing the integral reverse p-n junction diode. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V f MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 60V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 60V ƒ = 1.0MHz, See Fig. 5 RG = 2.5 Ω ID = 90A VDS = 25V, ID = 90A VDD = 38V ID = 90A VGS = 20V VGS = -20V VDS = 60V VGS = 10V f |
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