BAV170_15 datasheet(4/9 Pages) PHILIPS

4 / 9 page

2003 Mar 25

NXP Semiconductors

Product data sheet

Low-leakage double diode

BAV170

THERMAL CHARACTERISTICS

Note

Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

GRAPHICAL DATA

Device mounted on a FR4 printed-circuit board.

(1) Single diode loaded.

(2) Double diode loaded.

Fig.2

Maximum permissible continuous forward

current as a function of ambient

temperature.

handbook, halfpage

100

(mA)

200

300

100

200

MBG521

Tamb (

oC)

(1)

(2)

Fig.3

Forward current as a function of forward

voltage; per diode.

handbook, halfpage

1.6

300

100

200

MLB752 - 1

0.8

1.2

0.4

I F

(mA)

(V)

(1)

(2)

(3)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

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