Features

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Typical Connection

Data Sheet No. PD60028-M

HALF-BRIDGE DRIVER

Product Summary

600V max.

200 mA / 420 mA

10 - 20V

750 & 150 ns

Deadtime (typ.)

650 ns

www.irf.com

1

IR2111(S)&(PbF)

V

CC

V

B

V

S

HO

LO

IN

COM

IN

up to 600V

TO

LOAD

V

CC

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections

only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

Description

The IR2111(S) is a high voltage, high speed power

MOSFET and IGBT driver with dependent high and

low side referenced output channels designed for half-

bridge applications. Proprietary HVIC and latch

immune CMOS technologies enable ruggedized

monolithic construction. Logic input is compatible with

standard CMOS outputs. The output drivers feature a

high pulse current buffer stage designed for minimum

driver cross-conduction. Internal deadtime is provided

to avoid shoot-through in the output half-bridge. The

floating channel can be used to drive an N-channel

power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Packages

8-Lead PDIP

8-Lead SOIC