Adjustable, High-Linearity,

SiGe Dual-Band LNA/Mixer ICs

6

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AC ELECTRICAL CHARACTERISTICS (continued)

2182MHz (MAX2326 with BAND = high), LO input power = -7dBm (MAX2320/MAX2326), 50

noted.) (Note 2)

Note 1: See Tables 1–5 for operational mode selection.

Note 2: A total of 36 devices from 3 different wafer lots are used to determine the standard deviation. The lots were selected to rep-

resent worst-case process conditions.

Note 3: Operation is characterized for the frequencies specified in the conditions; for other frequencies in the band, see Tables 8–12

for LNA and mixer S parameters.

Note 4: Guaranteed by design, characterization, and production functional test.

Note 5: Guaranteed by design and characterization.

Characteristics.

PARAMETER

SYMBOL

CONDITIONS

MIN

-3

σ

TYP

+3

σ

MAX

UNITS

HIGH-GAIN, LOW-LINEARITY, AND LOW-GAIN MODES (Note 1)

Without doubler

10.6

11.3

12

12.1

12.8

PCS

With doubler

10.2

10.8

11.5

12.4

13.1

Gain (Note 4)

G

Cellular Band

11.2

12.1

13

13.8

14.7

dB

PCS

±1

±1

Gain Variation Over

Temperature Relative

to +25

°C

°C to

+85

°C

Cellular

±1

±1

dB

Without doubler

7.2

7.5

7.6

PCS

With doubler

(Note 7)

10.5

12

13.4

Without divider

7

7.2

7.6

Noise Figure

NF

Cellular

With divider

7.5

7.7

8.1

dB

Without doubler

+1

PCS

With doubler

+2.2

Input Third-Order

Intercept

IIP3

Cellular

+1.0

dBm

FM MODE (Note 1)

°C

9.7

10.4

11.2

11.9

12.7

Gain (Note 4)

G

°C to +85°C

7.8

9.0

11.2

14.0

15.4

dB

Noise Figure

NF

10.6

11.1

11.5

dB

Input Third-Order

Intercept (Notes 5, 6)

IIP3

°C to +85°C

2.3

3.2

4.9

dBm

LO BUFFER PERFORMANCE (BUFFEN = HIGH)

Load = 100

Ω pullup resistor

-12

LO Output Level

BUFFEN = GND

-44

dBm

LO_OUT Even Harmonic

Distortion

-31

dBc

LO Emissions at LNA

Input Port

Interstage filter rejection = 20dB

-50

dBm