| Electronic Components Datasheet Search |
|
IRFN340 Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRFN340 Datasheet(HTML) 2 Page - International Rectifier |
|
2 / 7 page ![]() IRFN340 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.55 VGS = 10V, ID = 6.0A Resistance — — 0.70 VGS = 10V, ID = 10A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 4.9 — — S VDS =15V, IDS = 6.0A Ã IDSS Zero Gate Voltage Drain Current — — 25 VDS= 320V ,VGS=0V — — 250 VDS = 320V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 65 VGS =10V, ID = 10A Qgs Gate-to-Source Charge — — 14 nC VDS = 200V Qgd Gate-to-Drain (‘Miller’) Charge — — 40.5 td(on) Turn-On Delay Time — — 25 VDD = 200V, ID = 10A, tr Rise Time — — 92 VGS =10V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 79 tf Fall Time — — 58 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 1400 — VGS = 0V, VDS = 25V Coss Output Capacitance — 3500 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 2300 — nA Ã nH ns µA Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.0 RthJ-PCB Junction-to-PC board — 4.0 — Soldered to a copper-clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 10 ISM Pulse Source Current (Body Diode) À —— 40 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 10A, VGS = 0V Ã trr Reverse Recovery Time — — 600 ns Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 5.6 µC VDD ≤ 30V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Measured from the center of drain pad to center of source pad. Ω |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |