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CSD87501LT Datasheet(PDF) 1 Page - Texas Instruments

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Part # CSD87501LT
Description  CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET
PDF  12 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD87501LT Datasheet(HTML) 1 Page - Texas Instruments

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VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
3
6
9
12
15
18
21
24
D007
TC = 25°C, I S = 7 A
TC = 125°C, I S = 7 A
Qg - Gate Charge (nC)
0
4
8
12
16
20
24
28
32
0
1
2
3
4
5
6
7
8
9
10
D004
IS = 7 A, VS1S2 = 15 V
Gate 2
Source 2
Gate 1
Source 1
S1
S1
G1
S1
S1
S2
S2
G2
S2
S2
Product
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Sample &
Buy
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Documents
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CSD87501L
SLPS523A – FEBRUARY 2015 – REVISED APRIL 2015
CSD87501L 30 V Dual Common Drain N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
•
Low On-Resistance
TA = 25°C
TYPICAL VALUE
UNIT
•
Small Footprint of 3.37 × 1.47 mm
VS1S2
Source-to-Source Voltage
30
V
•
Ultra-Low Profile – 0.2 mm High
Qg
Gate Charge Total (4.5 V)
15
nC
Qgd
Gate Charge Gate-to-Drain
6.0
nC
•
Pb-Free
VGS = 4.5 V
9.3
m
Ω
•
RoHS Compliant
Source-to-Source On-
RS1S2(on)
Resistance
VGS = 10 V
6.6
m
Ω
•
Halogen Free
VGS(th)
Threshold Voltage
1.8
V
•
Gate ESD Protection
.
2 Applications
Ordering Information(1)
•
Battery Management
Device
Media
Qty
Package
Ship
CSD87501L
7-Inch Reel
3000
3.37 mm X 1.47 mm
•
Battery Protection
Tape and
Land Grid Array
Reel
CSD87501LT
7-Inch Reel
250
•
USB Type-C /PD
Package
(1) For all available packages, see the orderable addendum at
3 Description
the end of the data sheet.
This 30 V, 6.6 m
Ω, 3.37 mm × 1.47 mm LGA Dual
Absolute Maximum Ratings
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
TA = 25°C
VALUE
UNIT
small size and common drain configuration make the
VS1S2
Source-to-Source Voltage
30
V
device ideal for multi-cell battery pack applications
VGS
Gate-to-Source Voltage
±20
V
and small handheld devices.
IS
Continuous Source Current(1)
14
A
ISM
Pulsed Source Current (2)
72
A
Top View
PD
Power Dissipation
2.5
W
V(ESD)
Human Body Model (HBM)
2
kV
Rating
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
(1) Typical RθJA = 50°C/W on a 1 inch
2, 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
.
(2) Typical min Cu RθJA = 135°C/W, pulse duration ≤100 μs, duty
cycle
≤1%.
Configuration
RS1S2(on) vs VGS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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