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BFS505 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # BFS505
Description  NPN 9 GHz wideband transistor
PDF  12 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFS505 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE =0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
up to Ts = 147 °C; note 1
−
150
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 147 °C; note 1
190 K/W



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