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LMV641 Datasheet(PDF) 1 Page - Texas Instruments

Part # LMV641
Description  LMV641 10 MHz, 12V, Low Power Amplifier
PDF  27 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LMV641 Datasheet(HTML) 1 Page - Texas Instruments

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background image
-400 -300 -200 -100
0
100 200 300 400
0
20
OFFSET VOLTAGE (PV)
2
4
6
8
10
12
14
16
18
V
+
= +5V
V
-
= -5V
VCM = 0V
TA = 25°C
UNITS TESTED = 12,000
180
100
10k
1M
100M
FREQUENCY (Hz)
-60
0
90
10M
100k
1k
150
120
60
30
-30
180
-60
0
90
150
120
60
30
-30
GAIN
PHASE
V
+
= +6V
V
-
= -6V
RL = 10 k:
CL = 20 pF
LMV641
www.ti.com
SNOSAW3C – SEPTEMBER 2007 – REVISED FEBRUARY 2013
LMV641 10 MHz, 12V, Low Power Amplifier
Check for Samples: LMV641
1
FEATURES
DESCRIPTION
The LMV641 is a low power, wide bandwidth
2
•
Guaranteed 2.7V, and ±5V Performance
operational amplifier with an extended power supply
•
Low Power Supply Current 138 µA
voltage range of 2.7V to 12V.
•
High Unity Gain Bandwidth 10 MHz
It features 10 MHz of gain bandwidth product with
•
Max Input Offset Voltage 500 µV
unity gain stability on a typical supply current of 138
•
CMRR 120 dB
μA. Other key specifications are a PSRR of 105 dB,
CMRR of 120 dB, VOS of 500 μV, input referred
•
PSRR 105 dB
voltage noise of 14 nV/
, and a THD of 0.002%.
•
Input Referred Voltage Noise 14 nV/
√Hz
This amplifier has a rail-to-rail output stage, and a
•
1/f Corner Frequency 4 Hz
common mode input voltage which includes the
negative supply.
•
Output Swing with 2 k
Ω Load 40 mV from Rail
•
Total Harmonic Distortion 0.002% @ 1kHz, 2k
Ω
The LMV641 operates over a temperature range of
−40°C to +125°C and is offered in the board space
•
Temperature Range
−40°C to 125°C
saving
5-Pin
SC70,
SOT-23,
and
8-Pin
SOIC
packages.
APPLICATIONS
•
Portable equipment
•
Battery powered systems
•
Sensors and instrumentation
Figure 1. Offset Voltage Distribution
Figure 2. Open Loop Gain and Phase vs.
Frequency
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2007–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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