SI7102DN datasheet(5/14 Pages) TFUNK

5 / 14 page

Document Number: 74250

S-83044-Rev. B, 22-Dec-08

www.vishay.com

Vishay Siliconix

Si7102DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

0.001

VSD - Source-to-Drain Voltage (V)

0.2

0.4

0.6

0.8

1.0

0.01

100

1.2

TJ = 150 °C

TJ = 25 °C

- 0.5

- 0.3

- 0.1

0.1

0.3

- 50

- 25

100

125

150

TJ - Temperature (°C)

ID = 250 µA

ID = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.004

0.008

0.012

0.016

0.020

012345

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

Time (s)

0.01

0.001

0.1

1000

100

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

1 ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

Limited by

DS(on)

10 s

1 s

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