SIRA18DP datasheet(1/13 Pages) TFUNK

Part #	SIRA18DP

Description	N-Channel 30 V (D-S) MOSFET

PDF	13 Pages

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Manufacturer	TFUNK [Vishay Telefunken]

Direct Link	http://www.vishay.com

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SiRA18DP

www.vishay.com

Vishay Siliconix

S14-0004-Rev. C, 13-Jan-14

1

Document Number: 62574

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

Ordering Information:

SiRA18DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® Gen IV Power MOSFET

• 100 % Rg and UIS tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•DC/DC conversion

• Battery protection

• Load switching

• DC/AC inverters

Notes

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) () MAX.

ID (A) a

Qg (TYP.)

30

0.0075 at VGS = 10 V

33

6.9 nC

0.0120 at VGS = 4.5 V

20.3

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+20, -16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

33

A

TC = 70 °C

26.3

TA = 25 °C

15.5 b,c

TA = 70 °C

12.4 b,c

Pulsed Drain Current (t = 300 μs)

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

13.3

TA = 25 °C

3 b,c

Single Pulse Avalanche Current

L = 0.3 mH

IAS

8.2

Single Pulse Avalanche Energy

EAS

10

mJ

Maximum Power Dissipation

TC = 25 °C

PD

14.7

W

TC = 70 °C

9.4

TA = 25 °C

3.3 b,c

TA = 70 °C

2.1 b,c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) d,e

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient b,f

t

 10 s

RthJA

30

37

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

78.5

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