SIRA18DP datasheet(3/13 Pages) TFUNK

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SiRA18DP

www.vishay.com

Vishay Siliconix

S14-0004-Rev. C, 13-Jan-14

Document Number: 62574

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

DS - Drain-to-Source Voltage (V)

GS = 3 V

GS = 10 V thru 4 V

GS = 2 V

0.000

0.004

0.008

0.012

0.016

0.020

D - Drain Current (A)

GS = 4.5 V

GS = 10 V

g - Total Gate Charge (nC)

DS = 15 V

DS = 20 V

DS = 10 V

D = 10 A

GS - Gate-to-Source Voltage (V)

C = 25 °C

C = 125 °C

C = - 55 °C

240

480

720

960

1200

DS - Drain-to-Source Voltage (V)

iss

oss

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0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

100

125

150

J - Junction Temperature (°C)

D = 10 A

GS = 10 V

GS = 4.5 V

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