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FCDN614 Datasheet(PDF) 2 Page - ON Semiconductor |
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FCDN614 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() FCDN614−UBM http://onsemi.com 2 Table 1. CURRENT/VOLTAGE GRAPH Symbol Description ICL+ Positive Clamping Current VCL+ Positive Clamping Voltage IL2+ Leakage Current at VL2+ VL2+ Voltage Condition: +10 V IL1+ Leakage Current at VL1+ VL1+ Voltage Condition: +4 V ICL− Negative Clamping Current VCL− Negative Clamping Voltage IL1− Leakage Current at VL1− VL1− Voltage Condition: −4V Figure 2. Current/Voltage Graph VCL− VL1− ICL− ICL+ I V IL1+ IL2+ IL1− VL1+ VL2+ VCL+ Table 2. ORDERING INFORMATION Ordering Part Number Topside Metal Backside Metal Thickness Shipping Method FCDN614−UBM Al (Aluminum) Bare Silicon 4 mils Wafer Form SPECIFICATIONS Table 3. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range −40 to +150 °C Storage Temperature Range −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 4. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range −40 to +150 °C |
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