FCDN614−UBM

http://onsemi.com

3

SPECIFICATIONS (Cont’d)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Leakage Current

V = ±4 V, 150°C (Note 2)

4.0

mA

mA

mA

Signal Clamp Voltage

+10.5

−9.0

+12.0

−7.0

+15.0

−5.0

V

ESD Protection − Withstand Voltage:

Human Body Model

(MIL−STD−883, Method 3015)

(Note 2)

±8

kV

Signal Node

Positive Transients

Negative Transients

(Note 2)

+22

−15

V

Input Capacitance

At 1 MHz, 30 mV osc.

Level, 0 VDC Bias

At 1 MHz, 30 mV osc.

Level, 3 VDC Bias

(Note 2)

4.7

3.0

pF

1. Operating characteristics are over standard operating conditions unless otherwise specified.

2. This parameter is guaranteed by design and/or characterization.

MECHANICAL DETAILS

Table 6. MECHANICAL SPECIFICATIONS

Parameter

Condition

Units

Composition

Silicon Wafer,

p+ Doped

Die Shape

Square

Length (Stepping Size)

240

mm

Width (Stepping Size)

240

mm

Thickness

4

mils

Saw Street Widths (Space

between Devices on Wafer)

(Note 1)

70 (X−Direction)

70 (Y−Direction)

mm

Top Pad Length

125

mm

Top Pad Width

125

mm

Top Pad Composition

Al (Aluminum)

Back Metal (Underside)

Bare Silicon

Die (Stepping Size)

240

mm

Passivation Opening

70

mm

Active Size

160

mm

Active to PA Opening

5

mm

1. The saw street is defined as the passivation−free area between

devices.

Figure 3. Package Dimensions

Top Pad Opening:

125 mm x 125 mm

Stepping Size:

240 mm x 240 mm