2N3866 datasheet(1/5 Pages) MICROSEMI

Part #	2N3866

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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1 / 5 page

MSC1067.PDF 3-10-99

2N3866 / 2N3866A

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter

30

Vdc

VCBO

Collector-Base Voltage

55

Vdc

VEBO

Emitter-Base Voltage

3.5

Vdc

IC

Collector Current

400

mA

Thermal Data

P

D

Total Device Dissipation

Derate above 25ºC

5.0

28.6

Watts

mW/ ºC

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Specified 400 MHz, 28Vdc Characteristics

- Output Power = 1.0 Watt

- Minimum Gain = 10 dB

- Efficiency = 45%

• 800 MHz Current-Gain Bandwidth Product

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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