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SM5010 Datasheet(PDF) 7 Page - Nippon Precision Circuits Inc

Part # SM5010
Description  Crystal Oscillator Module ICs
PDF  14 Pages
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Manufacturer  NPC [Nippon Precision Circuits Inc]
Direct Link  http://www.npc.co.jp/en
Logo NPC - Nippon Precision Circuits Inc

SM5010 Datasheet(HTML) 7 Page - Nippon Precision Circuits Inc

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SM5010 series
NIPPON PRECISION CIRCUITS—7
5010CL
× series
3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.
P arameter
Symbol
Condition
Rating
Unit
min
typ
m a x
HIGH-level output voltage
V OH
Q: Measurement cct 1, V DD = 2.7 V, IOH = 8 m A
2.2
2.4
–
V
L O W -level output voltage
V OL
Q: Measurement cct 2, V DD = 2.7 V, IOL = 8 m A
–
0.3
0.4
V
Output leakage current
IZ
Q: Measurement cct 2, I N H = L O W , V DD = 3.6 V, VOH = V DD
––
1 0
µA
Q: Measurement cct 2, I N H = L O W , V DD = 3.6 V, VOL = V SS
––
1 0
HIGH-level input voltage
V IH
INH
0.7VDD
V
L O W -level input voltage
V IL
INH
0.3VDD
V
Current consumption
IDD
Measurement cct 3, load cct 2,
INH = open, CL = 15 pF, f = 30 M H z
5010CL1
TBD
mA
5010CL2
5010CL3
5010CL4
INH pull-up resistance
R UP1
Measurement cct 4
–
100
–
k
Ω
R UP2
TBD
M
Ω
Feedback resistance
R f
Measurement cct 5
–
2 0 0
–
k
Ω
Built-in capacitance
C G
Design value, determined by the internal wafer pattern
TBD
pF
C D
pF
P arameter
Symbol
Condition
Rating
Unit
min
typ
m a x
HIGH-level output voltage
V OH
Q: Measurement cct 1, V DD = 4.5 V, IOH = 16 m A
4.0
4.2
–
V
L O W -level output voltage
V OL
Q: Measurement cct 2, V DD = 4.5 V, IOL = 16 m A
–
0.3
0.4
V
Output leakage current
IZ
Q: Measurement cct 2, I N H = L O W , V DD = 5.5 V, VOH = V DD
––
1 0
µA
Q: Measurement cct 2, I N H = L O W , V DD = 5.5 V, VOL = V SS
––
1 0
HIGH-level input voltage
V IH
INH
0.7VDD
V
L O W -level input voltage
V IL
INH
0.3VDD
V
Current consumption
IDD
Measurement cct 3, load cct 2,
INH = open, CL = 50 pF, f = 30 M H z
5010CL1
TBD
mA
5010CL2
5010CL3
5010CL4
INH pull-up resistance
R UP1
Measurement cct 4
–
100
–
k
Ω
R UP2
TBD
M
Ω
Feedback resistance
R f
Measurement cct 5
–
2 0 0
–
k
Ω
Built-in capacitance
C G
Design value, determined by the internal wafer pattern
TBD
pF
C D
pF



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