2SD1012

No.0676-2/10

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=15V, IE=0A

1.0

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1.0

μA

DC Current Gain

hFE1VCE=2V, IC=50mA

160*

960*

hFE2VCE=2V, IC=500mA Pulse

80

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

250

MHz

Common Base Output Capacitance

Cob

VCB=10V, f=1MHz

8

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)1

IC=5mA, IB=0.5mA

10

25

mV

VCE(sat)2

IC=100mA, IB=10mA

30

80

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=10mA

0.8

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

20

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

15

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

5

V

* : The 2SD1012 is classified by 50mA hFE as follows :

Rank

F

G

H

hFE

160 to 320

280 to 560

480 to 960

Ordering Information

Device

Package

Shipping

memo

2SD1012G-SPA

SPA

500pcs./bag

Pb Free

2SD1012G-SPA-AC

SPA-WA

2,500pcs./box

2SD1012F-SPA

SPA

500pcs./bag

2SD1012F-SPA-AC

SPA-WA

2,500pcs./box