FULL PAKt

High Voltage NPN Power Transistor

For Isolated Package Applications

The BUT11AF was designed for use in line operated switching

power supplies in a wide range of end use applications. This device

combines the latest state of the art bipolar fabrication techniques to

provide excellent switching, high voltage capability and low

saturation voltage.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage

450

Vdc

Collector–Emitter Breakdown Voltage

1000

Vdc

Emitter–Base Voltage

9.0

Vdc

RMS Isolation Voltage (For 1 sec,

Per Figure 7

4500

Per Figure 8

3500

V

Per Figure 9

2500

Collector Current — Continuous

5.0

10

Adc

Base Current — Continuous

2.0

4.0

Adc

Derated above 25

°C

40

0.32

Watts

W/

°C

Operating and Storage Temperature Range

– 65 to +150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case*

3.125

°C/W

Maximum Lead Temperature for soldering purposes

1/8

″ from case for 5 sec.

260

°C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

≤ 10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 4

1

Publication Order Number:

BUT11AF/D

BUT11AF

POWER TRANSISTOR

5.0 AMPERES

450 VOLTS

40 WATTS

CASE 221D–02

TO–220 TYPE