BC559 datasheet(1/4 Pages) ONSEMI

Part #	BC559

Description	Low Noise Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2006 − Rev. 3

1

Publication Order Number:

BC559/D

BC559

Low Noise Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC559

BC560

Unit

Collector−Emitter Voltage

VCEO

−30

−45

Vdc

Collector−Base Voltage

VCBO

−30

−50

Vdc

Emitter−Base Voltage

VEBO

−5.0

Vdc

Collector Current — Continuous

IC

−100

mAdc

Total Device Dissipation @

TA = 25°C

Derate above 25°C

PD

625

5.0

mW

mW/°C

Total Device Dissipation @

TC = 25°C

Derate above 25°C

PD

1.5

12

Watt

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to

Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

BC559

BC560

V(BR)CEO

−30

−45

—

Vdc

Collector−Base Breakdown Voltage

(IC = −10 μAdc, IE = 0)

BC559

BC560

V(BR)CBO

−30

−50

—

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

—

Vdc

Collector Cutoff Current

(VCB = −30 Vdc, IE = 0)

(VCB = −30 Vdc, IE = 0, TA = +125°C)

ICBO

—

−15

−5.0

nAdc

μAdc

Emitter Cutoff Current

(VEB = −4.0 Vdc, IC = 0)

IEBO

—

−15

nAdc

http://onsemi.com

CASE 29−04, STYLE 17

TO−92 (TO−226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER

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