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BC559 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BC559
Description  Low Noise Transistors
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC559 Datasheet(HTML) 2 Page - ON Semiconductor

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BC559
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = −10 μAdc, VCE = −5.0 Vdc)
BC559B
BC559C/560C
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
BC559B
BC559C/560C
BC559
hFE
100
100
180
380
120
150
270
290
500
—
—
—
460
800
800
—
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see note 1)
(IC = −100 mAdc, IB = −5.0 mAdc, see note 2)
VCE(sat)
—
—
—
−0.075
−0.3
−0.25
−0.25
−0.6
—
Vdc
Base−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
—
−1.1
—
Vdc
Base−Emitter On Voltage
(IC = −10 μAdc, VCE = −5.0 Vdc)
(IC = −100 μAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on)
—
—
−0.55
−0.52
−0.55
−0.62
—
—
−0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
fT
—
250
—
MHz
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Ccbo
—
2.5
—
pF
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)
BC559B
BC559C/BC560C
hfe
240
450
330
600
500
900
—
Noise Figure
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, Δf = 200 kHz)
NF1
NF2
—
—
0.5
—
2.0
10
dB
NOTES:
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 μs − Duty cycle = 2%.



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