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SSFN6816 Datasheet(PDF) 1 Page - GOOD-ARK Electronics

Part # SSFN6816
Description  30V Dual N-Channel MOSFET
PDF  4 Pages
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Manufacturer  GOOD-ARK [GOOD-ARK Electronics]
Direct Link  http://www.goodark.com
Logo GOOD-ARK - GOOD-ARK Electronics

SSFN6816 Datasheet(HTML) 1 Page - GOOD-ARK Electronics

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Rev.1.1
SSFN6816
30V Dual N-Channel MOSFET
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSFN6816
SSFN6816
DFN2×5-6L
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
ID
8
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
45
A
Maximum Power Dissipation
PD
1.7
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
/W
℃
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
GENERAL FEATURES
● VDS = 30V,ID = 8A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 24mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4.0V
RDS(ON) < 20mΩ @ VGS=4.5V
RDS(ON) < 17mΩ @ VGS=10V
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
DESCRIPTION
The SSFN6816 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
Schematic diagram
Marking and Pin Assignment
DFN2×5-6L Top View


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