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Rev.1.1

SSFN6816

30V Dual N-Channel MOSFET

Gate-Body Leakage Current

10

uA

Gate-Source Breakdown Voltage

±12

V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

0.6

1

1.5

V

14

17

17

20

18

22

20

24

Drain-Source On-State Resistance

23

30

mΩ

Forward Transconductance

17

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

870

PF

Output Capacitance

130

PF

Reverse Transfer Capacitance

F=1.0MHz

100

PF

Gate resistance

Rg

F=1.0MHz

1.5

Ω

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

4

nS

Turn-on Rise Time

10

nS

Turn-Off Delay Time

28

nS

Turn-Off Fall Time

7

nS

Total Gate Charge

10.5

nC

Gate-Source Charge

1.9

nC

Gate-Drain Charge

4.1

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.76

0.9

V

Diode Forward Current (Note 2)

4.5

A

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.