3

Preliminary Information

SP5730

Electrical Characteristics

Tamb= -40

o

C to 85

o

C, VCC= 4.5 to 5.5V

These characteristics are guaranteed by either production test or design. They apply within the specified

ambient temperature and supply voltage unless otherwise stated.

Characteristic

Pin

Value

Units

Conditions

Min

Typ

Max

Supply current

20

mA

RF input voltage

13,14

12.5

300

mVrms

100 MHz – 1.3GHz, see Figure. 4

RF input voltage

13,14

40

300

mVrms

50MHz - 100MHz, see Figure 4

RF input impedance

13,14

See Figure. 5

SDA, SCL

4, 5

Input high voltage

3

5.5

V

5V I

2

C logic selected

Input low voltage

0

1.5

V

5V I

2

C logic selected

Input high voltage

2.3

3.5

V

3V3 I

2

C logic selected

Input low voltage

0

1

V

3V3 I

2

C logic selected

Input high current

10

µA

Input voltage =Vcc

Input low current

10

µA

Input voltage = Vee

Leakage current

10

µA

Vee = Vcc

Hysteresis

0.4

V

SDA output voltage

4

0.4

V

Isink = 3mA

0.6

V

Isink = 6mA

SCL clock rate

5

400

kH

Charge pump output

1

See Table 6 Vpin1 = 2V

current

Charge pump output

1

3

10

nA

Vpin1 = 2V, Vcc = 5V, +25

°C

leakage

Charge pump drive

16

0.5

mA

Vpin16 = 0.7V

output current

Crystal frequency

2,3

2

20

MHz

See Figure 3 for application

Recommended crystal

10

200

Ω

4 MHz “parallel resonant”

series resistance

crystal.

External reference input

3

2

20

MHz

Sinewave coupled through

Frequency

10 nF blocking capacitor

External reference drive

3

0.2

0.5

Vpp

Sinewave coupled through

level

10 nF blocking capacitor