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NCE01H29TC Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE01H29TC Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  NCE01H29TC Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● VDSS =100V,ID =290A RDS(ON) < 3.2mΩ @ VGS=10V （Typ：2.7mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE01H29TC NCE01H29TC TO-247 - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 290 A Drain Current-Continuous(TC=100℃) ID (100℃) 200 A Pulsed Drain Current IDM 1120 A Maximum Power Dissipation PD 460 W Derating factor 3.07 W/℃ Single pulse avalanche energy (Note 3) EAS 3500 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ |
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