NCE01H29TC datasheet(2/7 Pages) NCEPOWER

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Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

NCE01H29TC

Pb Free Product

http://www.ncepower.com

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 1)

RθJC

0.33

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

100

110

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±200

On Characteristics

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

Drain-Source On-State Resistance

25℃

RDS(ON)

VGS=10V, ID=40A

2.7

3.2

mΩ

Forward Transconductance

gFS

VDS=25V,ID=40A

310

Dynamic Characteristics

Input Capacitance

Clss

16000

Output Capacitance

Coss

1352

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

1061

Switching Characteristics

Turn-on Delay Time

td(on)

44.6

Turn-on Rise Time

29.4

Turn-Off Delay Time

td(off)

139.8

Turn-Off Fall Time

VDD=50V,ID=40A

VGS=10V,RGEN=1.2Ω

(Note2)

36.4

Total Gate Charge

469

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V,ID=30A

VGS=10V

148

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V,IS=40A

1.2

Reverse Recovery Time

trr

87.9

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 40A

di/dt = 100A/μs

(Note2)

129

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes

1. Surface Mounted on FR4 Board, t ≤ 10 sec.

2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.

3. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=1mH,Rg=25Ω

ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS，TJ ≤175°C

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