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ECH8661 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ECH8661
Description  Complementary Dual Power MOSFET
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ECH8661 Datasheet(HTML) 2 Page - ON Semiconductor

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Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=3.5A
3.7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=3.5A, VGS=10V
18
24
mΩ
RDS(on)2
ID=2A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=2A, VGS=4V
39
55
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
710
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
72
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
25
ns
Turn-OFF Delay Time
td(off)
43
ns
Fall Time
tf
25
ns
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=7A
11.8
nC
Gate-to-Source Charge
Qgs
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
2.0
nC
Diode Forward Voltage
VSD
IS=7A, VGS=0V
0.79
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--2.5A
5.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--2.5A, VGS=--10V
30
39
mΩ
RDS(on)2
ID=--1.5A, VGS=--4.5V
55
77
mΩ
RDS(on)3
ID=--1.5A, VGS=--4V
58
82
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
600
pF
Output Capacitance
Coss
145
pF
Reverse Transfer Capacitance
Crss
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.2
ns
Rise Time
tr
23
ns
Turn-OFF Delay Time
td(off)
63
ns
Fall Time
tf
42
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--5.5A
13
nC
Gate-to-Source Charge
Qgs
1.8
nC
Gate-to-Drain “Miller” Charge
Qgd
3.2
nC
Diode Forward Voltage
VSD
IS=--5.5A, VGS=0V
--0.82
--1.2
V
ECH8661
No. A1777-2/9



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