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2N7002H Datasheet(PDF) 2 Page - Diodes Incorporated

Part # 2N7002H
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2N7002H Datasheet(HTML) 2 Page - Diodes Incorporated

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2N7002H
Document number: DS38025 Rev. 1 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated
2N7002H
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
170
120
105
mA
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
210
150
135
mA
Maximum Body Diode Forward Current (Note 6)
Continuous
Pulsed
IS
0.5
2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 5)
PD
370
mW
(Note 6)
510
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
341
°C/W
(Note 6)
249
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
2.0
3.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS (ON)
3.0
7.5
Ω
VGS = 5.0V, ID = 0.05A
Diode Forward Voltage
VSD
0.78
1.5
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
26
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
2.8
pF
Reverse Transfer Capacitance
Crss
2.1
pF
Total Gate Charge (VGS = 4.5V)
Qg

352
pC
VDS = 10V, ID = 250mA
Gate-Source Charge
Qgs

203
Gate-Drain Charge
Qgd

123
Turn-On Delay Time
tD(on)
3.7
ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-On Rise Time
tr
2.9
Turn-Off Delay Time
tD(off)

8.4
Turn-Off Fall Time
tf

4.7
Body Diode Reverse Recovery Time
trr
-
9.3
-
ns
IS = 0.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
-
3.5
-
nC
IS = 0.5A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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