P - HEMT

CFH800

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Infineon Technologies

pg. 2/7

01.03.2002

WS GS CE GaAs

Electrical characteristics at TA = 25°C

unless otherwise specified

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

VDS = 3 V

VGS = 0 V

IDSS

0

80

140

mA

Pinch-off voltage

VDS = 3 V

ID = 1 mA

VGS(P)

-0.7

-0.25

0.0

V

Gate leakage current

VDS = 3 V

ID = 30 mA

IG

-

-

10

µA

Transconductance

VDS = 3 V

ID = 30 mA

gm

140

200

-

mS

Noise figure*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 30 mA

f = 1.8 GHz

F

-

0.56

0.50

-

1

dB

Associated gain*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 30 mA

f = 1.8 GHz

Ga

-

16

15

17

-

dB

IIP3*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 30 mA

f = 1.8 GHz

IIP3

-

8.5

13

-

dBm

* Parameters are measured for input impedance for minimum noise figure and output impedance for

maximum gain.