DMN3032LFDB

Document number: DS35730 Rev. 3 - 2

2 of 6

www.diodes.com

September 2015

© Diodes Incorporated

DMN3032LFDB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

6.2

5.0

A

Maximum Continuous Body Diode Forward Current (Note 6)

2

A

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

25

A

Avalanche Current (Note 7) L = 0.1mH

12

A

Avalanche Energy (Note 7) L = 0.1mH

10

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.0

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

127

°C/W

t<10s

75

Total Power Dissipation (Note 6)

1.7

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

72

°C/W

t<10s

43

Thermal Resistance, Junction to Case (Note 6)

9

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

30

-

-

V

-

-

1.0

μA

-

-

100

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

1.5

2.0

V

Static Drain-Source On-Resistance

-

25

30

30

42

m

Ω

Diode Forward Voltage

-

0.75

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

500

-

pF

f = 1.0MHz

Output Capacitance

-

52

-

pF

Reverse Transfer Capacitance

-

44

-

pF

Gate Resistance

-

2.3

-

Ω

-

5.0

-

nC

-

10.6

-

nC

Gate-Source Charge

-

1.3

-

nC

Gate-Drain Charge

-

1.8

-

nC

Turn-On Delay Time

-

2.2

-

ns

Turn-On Rise Time

-

2.6

-

ns

Turn-Off Delay Time

-

9.7

-

ns

Turn-Off Fall Time

-

2.0

-

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.