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DMN3032LFDB-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN3032LFDB-13
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3032LFDB-13 Datasheet(HTML) 4 Page - Diodes Incorporated

  DMN3032LFDB-13 Datasheet HTML 1Page - Diodes Incorporated DMN3032LFDB-13 Datasheet HTML 2Page - Diodes Incorporated DMN3032LFDB-13 Datasheet HTML 3Page - Diodes Incorporated DMN3032LFDB-13 Datasheet HTML 4Page - Diodes Incorporated DMN3032LFDB-13 Datasheet HTML 5Page - Diodes Incorporated DMN3032LFDB-13 Datasheet HTML 6Page - Diodes Incorporated  
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DMN3032LFDB
Document number: DS35730 Rev. 3 - 2
4 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMN3032LFDB
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=10V, ID=5.0A
V
GS=4.5V, ID=3.0A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D=250A
I
D=1mA
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V,
T
A=-55℃
V
GS=0V, TA=25℃
V
GS=0V, TA=85℃
V
GS=0V, TA=125℃
V
GS=0V, TA=150℃
10
100
1000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
V
DS=15V, ID=3.6A
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=150℃
T
A=25℃
Single Pulse
DUT on
1*MRP board
V
GS=4.5V
R
DS(ON) Limited
P
W=10s
DC
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100µs



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