DMT10H015LSS

Document number: DS38046 Rev. 3 - 2

2 of 7

www.diodes.com

November 2015

© Diodes Incorporated

DMT10H015LSS

Characteristic

Symbol

Value

Units

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Steady

State

8.3

6.7

A

Maximum Continuous Body Diode Forward Current (Note 6)

3

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

54

A

Avalanche Current (Note 8) L = 3mH

7.5

A

Avalanche Energy (Note 8) L = 3mH

85

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.2

W

Thermal Resistance, Junction to Ambient (Note 5)

100

°C/W

Total Power Dissipation (Note 6)

1.67

W

Thermal Resistance, Junction to Ambient (Note 6)

75

°C/W

Thermal Resistance, Junction to Case (Note 6)

12

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

100

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.4

2.0

3.0

V

Static Drain-Source On-Resistance

—

14

16

m

Ω

—

15

18

—

17

25

Diode Forward Voltage

—

0.9

1.3

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1,871

—

pF

f = 1MHz

Output Capacitance

—

261

—

Reverse Transfer Capacitance

—

6.9

—

Gate Resistance

—

0.75

—

Ω

Total Gate Charge

—

33.3

—

nC



Gate-Source Charge

—

6.9

—

Gate-Drain Charge

—

5.1

—

Turn-On Delay Time

—

6.5

—

nS

Turn-On Rise Time

—

7.0

—

Turn-Off Delay Time

—

19.7

—

Turn-Off Fall Time

—

8.1

—

Reverse Recovery Time

—

37.9

—

nS

Reverse Recovery Charge

—

51.9

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.