| Electronic Components Datasheet Search |
|
DMT10H015LSS Datasheet(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMT10H015LSS Datasheet(HTML) 4 Page - Diodes Incorporated |
|
4 / 7 page ![]() DMT10H015LSS Document number: DS38046 Rev. 3 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LSS 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) J Figure 7 On-Resistance Variation with Junction Temperature V = 4.5V GS I = 5A D V = 6V GS I = 20A D V = 10V GS I = 20A D 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A Figure 8 Gate Threshold Variation vs. Ambient Temperature I = 250µA D I = 1mA D 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 V , SOURCE-DRAIN VOLTAGE (V) SD Figure 9 Diode Forward Voltage vs. Current T = 150 C A T = 125 C A T = 85 C A T = 25 C A T = -55 C A 1 10 100 1000 10000 0 10 20 30 40 50 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 10 Typical Junction Capacitance Ciss C oss Crss f = 1MHz 0 2 4 6 8 10 0 5 10 15 20 25 30 Q , TOTAL GATE CHARGE (nC) g Figure 11 Gate Charge V = 50V DS I = 10A D 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 12 SOA, Safe Operation Area RDS(on) Limited DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |