DMN2005UPS datasheet(2/7 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMN2005UPS

Document number: DS37844 Rev. 2 - 2

2 of 7

www.diodes.com

August 2015

DMN2005UPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TC = +25°C

TC = +70°C

100

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

IDM

150

Maximum Continuous Body Diode Forward Current (Mounted on Infinite Heatsink)

150

Avalanche Current (Note 7) L=0.2mH

IAS

Avalanche Energy (Note 7) L=0.2mH

EAS

133

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

°C/W

t<10s

Total Power Dissipation (Note 6)

3.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RJA

°C/W

t<10s

Thermal Resistance, Junction to Case

RJC

1.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.4

0.7

1.2

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

4.6

VGS = 4.5V, ID = 13.5A

—

8.7

VGS = 2.5V, ID = 13.5A

Diode Forward Voltage

VSD

—

0.8

1.1

VGS = 0V, IS = 27A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

5337

—

VDS = 10V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

560

—

Reverse Transfer Capacitance

Crss

—

505

—

Gate Resistance

—

0.7

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

VDS = 16V, ID = 27A

Total Gate Charge (VGS = 10V)

—

142

—

Gate-Source Charge

Qgs

—

Gate-Drain Charge

Qgd

—

Turn-On Delay Time

tD(ON)

—

12.4

—

VGS = 5V, VDS = 10V,

RG = 4.7Ω, ID = 13.5A

Turn-On Rise Time

—

29.8

—

Turn-Off Delay Time

tD(OFF)

—

117

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

tRR

—



17.8

—



IF = 13.5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



8.6

—



IF = 13.5A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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