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DMN2005UPS

Document number: DS37844 Rev. 2 - 2

4 of 7

www.diodes.com

August 2015

© Diodes Incorporated

DMN2005UPS

0

0.001

0.002

0.003

0.004

0.005

0.006

-50

-25

0

25

50

75

100

125

150

T

Figure 7. On-Resistance Variation with Junction

Temperature

V

V

0

0.2

0.4

0.6

0.8

1

1.2

-50

-25

0

25

50

75

100

125

150

T

Figure 8. Gate Threshold Variation vs. Junction

Temperature

I

I

0.1

1

10

100

1000

10000

100000

1000000

0

5

10

15

20

V

Figure 10 .Typical Drain-Source Leakage Current vs.

Voltage

25

℃

85

℃

125

℃

150

℃

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

V

Figure 9. Diode Forward Voltage vs. Current

V

V

V

V

V

10

100

1000

10000

100000

0

5

10

15

20

V

Figure 11. Typical Junction Capacitance

f=1MHz

0

2

4

6

8

10

0

30

60

90

120

150

Q

Figure 12. Gate Charge

V