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PAM8320 Datasheet(PDF) 3 Page - Diodes Incorporated |
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PAM8320 Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 11 page ![]() PAM8320 Document number: DS36610 Rev. 1 - 2 3 of 11 www.diodes.com October 2013 © Diodes Incorporated PAM8320 A PRODUCT LINE OF DIODES INCORPORATED Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit Supply Voltage (VCC) 18 V Logic Input Voltage (SDN, MUTE) -0.3 to VCC+0.3 V Analog Input Voltage (IN) -0.3 to 5.5 V Storage Temperature -65 to +150 °C Maximum Junction Temperature +150 °C Junction to ambient thermal resistance 40 °C/W Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VCC Supply Voltage 4.5 15 V TA Operating Ambient Temperature Range -40 +85 °C TJ Junction Temperature Range -40 +125 °C Electrical Characteristics (@TA = +25°C, VCC = 12V, Gain = 20dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.) Symbol PARAMETER Test Conditions MIN TYP MAX Units |VOS| Class-D output offset voltage(measured differently) Vi=0V, Av=20dB — 20 100 mV ICC(q) Quiescent supply current SDN=3.0V, MUTE=0V, No Load — 15 30 mA ICC(MUTE) Quiescent supply current in mute mode MUTE=2.0V, No load — 8 20 mA ICC(SDN) Quiescent current in shutdown mode SDN=0.5V, No load — 20 40 uA Rds(on) Drain-source on-state resistance IO=0.5A — 150 — mΩ PSRR Power Supply Rejection Ratio Vripple=200mVpp, f=1kHz,gain=20dB — -60 — dB Po Output Power at 1% THD+N f=1kHz — 15 — W Output Power at 10% THD+N f=1kHz — 20 — THD+N Total harmonic distortion + noise f=1kHz, PO=7W — 0.05 — % Vn Output integrated noise floor 20Hz to 22kHz, A-weighted, Gain=20dB — 300 — uV SNR Signal-to-noise ratio Max output at THD+N<1%, f=1kHz, Gain=20dB — 95 — dB OTP Thermal trip point — — +160 — °C OTH Thermal hysteresis — — +40 — °C fosc Oscillator frequency — — 300 — kHz VIH_SDN SDN Input High — 3 — — — VIL_SDN SDN Input Low — — — 0.5 — VIH_MUTE MUTE Input High — 2 — — — VIL_MUTE MUTE Input Low — — — 0.5 — |
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