BFP405F

Dec-07-2001

1

NPN Silicon RF Transistor

Preliminary data

For low current applications

Smallest Package 1.4 x 0.8 x 0.59mm

Noise figure F = 1.25 dB at 1.8 GHz

Gold metallization for high reliability

TSFP-4

1

2

4

3

AL s



!

"

di r e c t i o n of unr eel i n g

t op v i ew

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP405F

ALs

1=B

2=E

3=C

4=E

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.5

V

Collector-base voltage

15

Emitter-base voltage

1.5

Collector current

12

mA

Base current

1

Total power dissipation

55

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

500

K/W