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BFP520 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BFP520 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 8 page ![]() BFP520 SIEGET45 Sep-26-2001 7 Power gain Gma, Gms, |S21|2 = f ( f ) VCE = 2V, IC = 20 mA 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f 0 4 8 12 16 20 24 28 32 36 dB 44 Gms Gma |S21|2 Power gain Gma, Gms = f (IC) VCE = 2V f = parameter in GHz 0 5 10 15 20 25 30 35 mA 45 IC 0 4 8 12 16 20 24 dB 32 0.9 1.8 2.4 3 4 5 6 Power gain Gma, Gms = f (VCE) IC = 20 mA f = parameter in GHz 0.0 0.5 1.0 1.5 2.0 V 3.0 VCE 0 4 8 12 16 20 24 dB 32 0.9 1.8 2.4 3 4 5 6 Collector-base capacitance Ccb = f (VCB) f = 1MHz 0.0 0.5 1.0 1.5 2.0 V 3.0 VCB 0.00 0.05 0.10 0.15 0.20 pF 0.30 |
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