BFP650

Jan-08-2004

1

NPN Silicon Germanium RF Transistor

Preliminary data

• For high power amplifiers

• Ideal for low phase noise oscilators

Noise figure F = 0.9 dB at 1.8 GHz

• Gold metallization for high reliability

VPS05605

4

2

1

3

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP650

R5s

1=B

2=E

3=C

4=E

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4

V

Collector-emitter voltage

13

Collector-base voltage

13

Emitter-base voltage

1.2

Collector current

150

mA

Base current

10

500

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 140

K/W

1TS is measured on the collector lead at the soldering point to the pcb