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BSP125 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSP125
Description  SIPMOS Power-Transistor
PDF  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP125 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2003-02-26
Page 1
Rev. 1.0
BSP125
SIPMOS® Power-Transistor
Product Summary
VDS
600
V
RDS(on)
45
Ω
ID
0.12
A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
SOT-223
Marking
BSP125
Type
Package
Ordering Code
Tape and Reel Information
BSP125
SOT-223
Q62702-S654
E6327: 3000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.12
0.1
A
Pulsed drain current
TA=25°C
ID puls
0.48
Reverse diode dv/dt
IS=0.12A, VDS=480V, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
TA=25°C, TA=25
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56


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