STP18N60DM2 datasheet(3/13 Pages) STMICROELECTRONICS

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STP18N60DM2

Electrical ratings

DocID027674 Rev 3

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase= 100 °C

7.6

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

–55 to 150

°C

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 12 A, di/dt ≤ 400 A/µS, VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

1.39

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

2.5

EAR(2)

Single pulse avalanche energy

380

Notes:

(1) Pulse width is limited by Tjmax.

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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