STP18N60DM2 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STP18N60DM2

Description	Extremely high dv/dt ruggedness

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

STP18N60DM2

Electrical characteristics

DocID027674 Rev 3

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 12 A

1.6

trr

Reverse recovery time

ISD = 12 A,

di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive

load switching and diode

recovery times")

125

Qrr

Reverse recovery charge

0.675

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 12 A,

di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test

circuit for inductive load

switching and diode

recovery times")

190

Qrr

Reverse recovery charge

1225

IRRM

Reverse recovery current

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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