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BTS120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS120 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() TEMPFET® BTS 120 1 04.97 3 2 1 Features q N channel q Enhancement mode q Temperature sensor with thyristor characteristic q The drain pin is electrically shortet to the tab Pin 1 2 3 GD S Type V DS I D R DS(on) Package Ordering Code BTS 120 100 V 19 A 0.1 Ω TO-220AB C67078-A5009-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 100 V Drain-gate voltage, R GS = 20 kΩ V DGR 100 Gate-source voltage V GS ± 20 Continuous drain current, T C = 25 °C I D 19 A ISO drain current T C = 85 °C, VGS = 10 V, VDS = 0.5 V I D-ISO 3.5 Pulsed drain current, T C = 25 °C I D puls 76 Short circuit current, T j = – 55 ... + 150 °C I SC 55 Short circuit dissipation, T j = – 55 ... + 150 °C P SCmax 800 W Power dissipation P tot 75 Operating and storage temperature range T j, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient R th JC R th JA ≤ 1.67 ≤ 75 K/W |
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