STD95N4LF3 datasheet(3/15 Pages) STMICROELECTRONICS

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STD95N4LF3

Electrical ratings

Doc ID 15372 Rev 3

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 16

(1)

Value limited by wire bonding

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

110

Derating factor

0.73

W/°C

dv/dt (3)

ISD ≤ 80 A, di/dt ≤ 40 A/µs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25 °C, ID = 40 A, VDD = 35 V Figure 16 and Figure 17

Single pulse avalanche energy

400

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.36

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 2Oz Cu board

Thermal resistance junction-pcb max

°C/W

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