STD95N4LF3 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STD95N4LF3

4/15

Doc ID 15372 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 μA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 40 V

VDS = 40 V, TC= 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16 V

±200

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 40 A

VGS = 5 V, ID = 40 A

5.0

6.0

9.0

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

2500

560

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 20 V, ID = 40 A

RG =4.7 Ω VGS = 10 V

(see Figure 13 and

Figure 18)

7.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20 V, ID = 80 A,

VGS = 10 V (see Figure 14)

9.5

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