STGF17NC60SD datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STGF17NC60SD

Electrical characteristics

Doc ID 018834 Rev 1

3/9

Electrical characteristics

Tj = 25°C unless otherwise specified.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 12 A

VGE = 15 V, IC = 12 A,

Tj =125°C

1.55

1.35

1.9

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.2

6.2

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, Tj =125°C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V, VCE = 0

±100

gfs

Forward transconductance

VCE = 15 V, IC = 12 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

1190

135

28.5

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480 V, IC = 12 A,

VGE = 15 V, Figure 3

54.5

8.7

25.8

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 480 V, IC = 12 A

RG = 10 Ω, VGE = 15 V,

Figure 4

17.5

6.2

1870

A/µs

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 480 V, IC = 12 A

RG = 10 Ω, VGE= 15 V,

Tj = 125°C, Figure 4

6.5

1700

A/µs

tr(Voff)

td(Voff)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 480 V, IC = 12 A

RG = 10 Ω, VGE = 15 V,

Figure 4

175

215

tr(Voff)

td(Voff)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 480 V, IC = 12 A

RG = 10 Ω, VGE = 15 V,

Tj = 125°C, Figure 4

155

245

290

STGF17NC60SD Datasheet(PDF) 3 Page - STMicroelectronics

STGF17NC60SD Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL