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STP80N70F4 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP80N70F4 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 12 page ![]() STP80N70F4 Electrical characteristics Doc ID 18377 Rev 2 7/12 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 20 Qg(nC) (V) 80 8 40 60 10 VDD=34V ID=80A 100 12 AM13034v1 C 100 0 20 VDS(V) (pF) 10 30 Ciss Coss Crss 50 40 60 70 1000 AM13035v1 VGS(th) 1.0 0.8 0.6 0.4 TJ(°C) (norm) -25 1.2 75 25 125 175 ID=250µA AM13036v1 RDS(on) 2.0 1.5 1.0 0.5 TJ(°C) (norm) -25 75 25 125 175 0 ID=40A VGS=10V AM13037v1 VSD 0 20 ISD(A) (V) 10 50 30 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=-55°C TJ=25°C TJ=175°C 1.0 80 60 70 AM13038v1 |
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