BTS650P datasheet(3/16 Pages) INFINEON

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Data Sheet BTS650P

Infineon Technologies AG

Page 3

2003-Oct-01

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

typ

max

Thermal resistance

chip - case:

RthJC

)

0.75

K/W

junction - ambient (free air):

RthJA

SMD version, device on PCB

8):

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,2,6,7, see

measurement circuit page 7)

IL = 20 A, Tj = 25 °C:

VIN = 0, IL = 20 A, Tj = 150 °C:

RON

4.4

7.9

6.0

10.5

Ω

IL = 90 A, Tj = 150 °C:

10.7

Vbb = 6V

9), IL = 20 A, Tj = 150 °C: RON(Static)

Nominal load current

10) (Tab to pins 1, 2, 6, 7)

ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C

)

IL(ISO)

Nominal load current 10), device on PCB 8)

TA = 85 °C, Tj

≤ 150 °C V

≤ 0.5 V,

IL(NOM)

13.6

Maximum load current in resistive range

(Tab to pins 1, 2, 6, 7)

VON = 1.8 V, Tc = 25 °C:

see diagram on page 13

VON = 1.8 V, Tc = 150 °C:

IL(Max)

250

150

Turn-on time

12)

IIN

to 90% VOUT:

Turn-off time

IIN

to 10% VOUT:

RL = 1

Ω , Tj =-40...+150°C

ton

toff

100

420

110

µs

Slew rate on 12) (10 to 30% VOUT )

RL = 1

Ω , T

J = 25 °C

dV/dton

0.7

µs

Slew rate off 12) (70 to 40% VOUT )

RL = 1

Ω , T

J = 25 °C

-dV/dtoff

1.1

µs

)

Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!

)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2 (one layer, 70

µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

)

Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As

long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.

)

not subject to production test, specified by design

)

TJ is about 105°C under these conditions.

)

See timing diagram on page 14.

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