STB130N6F7 datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STB130N6F7

Description	Low Crss/Ciss ratio for EMI immunity

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STB130N6F7

Electrical ratings

DocID027380 Rev 5

3/14

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±20

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(2)

Drain current (pulsed)

320

PTOT

Total dissipation at Tcase = 25 °C

160

EAS(3)

Single pulse avalanche energy

200

Tstg

Storage temperature

-55 to 175

°C

Operating junction temperature

Notes:

(1) Current is limited by package.

(2) Pulse width is limited by safe operating area.

(3) starting Tj = 25 °C, ID = 20 A, VDD = 40 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.94

°C/W

Rthj-amb(1)

Thermal resistance junction-ambient

Notes:

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.

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